Abstract: Resolution-enhancement technologies such as phase-shifting masks (PSMs) and modified illumination are currently critical issues in optical lithography. Because the most effective way to obtain higher resolution is by using PSM technology, we have examined light intensity profiles for various types of PSMs by simulation and found that the PSM structure with an SOG phase-shifter on a thin Cr layer is one of the best choices for KrF excimer laser lithography. We also examined potential problems, such as the durability of SOG materials and phase angle error due to surface topography of the Cr patterns, and found not only that no significant degradation occurs when the SOG phase-shifter is exposed to KrF excimer laser light, but also that the phase angle can be controlled precisely enough for gigabit-level ULSI device fabrication. We used improved 0.16 $mu@m design rule PSMs to successfully delineate, with sufficient DOF range, several layers of experimental 1-Gb DRAM devices.!8
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机译：摘要：诸如移相掩模（PSM）和改进的照明等分辨率增强技术目前是光刻技术中的关键问题。因为获得高分辨率的最有效方法是使用PSM技术，所以我们通过仿真检查了各种类型PSM的光强度曲线，发现在薄Cr层上带有SOG相移器的PSM结构是最好的结构之一。 KrF准分子激光光刻的选择。我们还研究了潜在的问题，例如SOG材料的耐用性以及由于Cr图案的表面形貌所引起的相角误差，并且发现，当SOG相移器暴露于KrF准分子激光时，不仅不会出现明显的劣化，而且还可以精确地控制相位角，以进行千兆级的ULSI器件制造。我们使用改进的0.16 $ mu @ m设计规则PSM，以足够的自由度范围成功地描绘了几层实验性1-Gb DRAM设备。8
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