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首页> 外文会议>Photomask and X-Ray Mask Technology II >Dependency of side-lobe effect of half-tone phase-shift mask on substrate material and topology and its solutions
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Dependency of side-lobe effect of half-tone phase-shift mask on substrate material and topology and its solutions

机译：半音相移掩模的旁瓣效应对衬底材料和拓扑的依赖性及其解决方案

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Abstract: In forming contact patterns using half-tone phase shift masks, loss of the resist film at side-lobe positions needs to be avoided. Up to now, resist dimples have been studied in terms of transmittance of halftone materials and pattern packing density. However, we found that loss of the resist film was not confined to side-lobe effect in the mask level. We investigated dependency of side-lobe effect of halftone phase shift masks on substrate material and topology in forming contact hole patterns. It was found that the leaky light passing through halftone regions created resist dimples. The magnitude of resist film erosions depended on substrate material and thickness having different thin film interferences. Furthermore, the reflecting topography of wafer substrates was an origin of resist erosion, which was explained by 'concave mirror effect'. It was also verified that ARC was very effective to solve problems mentioned above. We proposed double layered blank masks as a simple solution.!2
机译：摘要：在使用半色调相移掩模形成接触图案时，需要避免在旁瓣位置损失抗蚀剂膜。迄今为止，已经根据半色调材料的透射率和图案堆积密度研究了抗蚀剂凹痕。然而，我们发现抗蚀剂膜的损失并不仅限于掩模水平的旁瓣效应。我们研究了半色调相移掩模的旁瓣效应对形成接触孔图案时衬底材料和拓扑结构的依赖性。已经发现，穿过半色调区域的漏光会产生抗蚀剂凹痕。抗蚀剂膜腐蚀的程度取决于具有不同薄膜干涉的衬底材料和厚度。此外，晶圆基板的反射形貌是抗蚀剂腐蚀的根源，这可以通过“凹面镜效应”来解释。还证实了ARC对于解决上述问题非常有效。我们提出了双层空白口罩作为一种简单的解决方案。！2

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