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Control of the polarity and surface morphology of GaN films deposited on c-plane sapphire

机译：控制在c面蓝宝石上沉积的GaN膜的极性和表面形态

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Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2 mum GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H sub 2 atmosphere. It was considered that the systematic variation of the furface morphology was caused by the polarity composition of the buffer layer.

机译：通过衬底氮化和缓冲层的后续退火，可以控制通过有机金属化学气相沉积法沉积的GaN膜的极性。 1.2 um GaN薄膜的表面形貌和光学性能受极性方向的不同生长方式的影响。同轴碰撞碰撞离子散射光谱显示，氮化蓝宝石上缓冲层的极性组成会因在H sub 2气氛中退火而发生变化。认为表面形态的系统变化是由缓冲层的极性组成引起的。

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《Symposium on GaN and related alloys》|1999年|p.G6.23.1-8|共1页
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M.Sumiya; Y.Ohnishi; M.Tanaka; A.Ohtomo; M.Kawasaki; M.Yoshimoto; H.Koinuma; K.Ohtsuka; S.Fuke;
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中图分类金属学与金属工艺;
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4. Control of the polarity and surface Morphology of GaN Films Deposited on C-Plane Sapphire [C] . M.Sumiya, T.Ohnishi Symposium on GaN and related alloys . 1999

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Control of the polarity and surface morphology of GaN films deposited on c-plane sapphire

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