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Doping of AlGaN alloys

机译：掺杂AlGaN合金

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摘要

Nitride-based device structures for electronic and optoelectronic applications usually incorproate layers of Al sub x Ga sub 1-xN, and n- and p-type doping of these alloys is typically required. Experimental results indicate that doping efficiencies in Al sub x Ga sub 1-xN are lower than in GaN. We address the cause of these doping difficulties, based on results from first-principles density functional-pseudopotential calculations. For n-type doping we will discuss doping with oxygen, the most common unintentional donor, and with silicon. For oxygen, a DX transition occurs which converts the shallow donor into a negatively charged deep level. We present experimental evidence that oxygen is a DX center in Al sub x Ga sub 1-xN for x>-0.3. For p-type doping, we find that compensation by nitrogen vacancies becomes increasingly important as the Al content is increased. We also find that the ionization energy of the Mg acceptor increases with alloy composition x. To address the limitations on p-type doping we have performed a comprehensive investigation of alternative acceptor impurities; none of the candidates exhibits characteristics that surpass those of Mg in all respects.
机译：用于电子和光电应用的氮化物的器件结构通常是Al Sub X Ga Sub 1-Xn的族层，并且通常需要这些合金的N-和P型掺杂。实验结果表明，Al Sub X Ga Sub 1-xn中的掺杂效率低于GaN。基于第一原理密度函数伪能量计算的结果，我们解决了这些兴奋剂困难的原因。对于n型掺杂，我们将讨论掺杂氧气，最常见的无意供体和硅。对于氧气，发生DX过渡，将浅供体转化为带负电的深度水平。我们提出了实验证据，即氧气是Al Sub X Ga Sub 1-xn的DX中心，用于X> -0.3。对于p型掺杂，我们发现氮空位的补偿变得越来越重要，因为Al含量增加。我们还发现MG受体的电离能量与合金组合物x增加。为了解决P型掺杂的局限，我们已经进行了对替代受体杂质的全面调查;候选人都没有表现出在各方面超越MG的特征。

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