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Ensemble monte carlo study of electron transport in bulk indium nitride

机译：块状氮化铟中电子传输的集成蒙特卡洛研究

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Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the4 first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.
机译：给出了在整体上纤锌矿相InN的高施加电场强度下电子输运的整体蒙特卡洛计算。使用包括伪电位带结构，所有相关声子散射剂和从数值推导的碰撞电离跃迁速率的全频带蒙特卡洛模拟执行计算。模拟中包括前四个导带的全部细节，其能量扩展到导通最小值最小值以上约8 eV。电子引发的碰撞电离系数和量子产率是使用全频带蒙特卡洛模型计算的。与以前对块状GaN和ZnS的计算进行了比较。已经发现，由于InN中的带隙较窄，因此存在比GaN或ZnS中更低的击穿场。

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