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首页> 外文会议>Symposium on GaN and related alloys >Mechanism for Radiative recombination in In(sub)0.15Ga(sub)0.85N/GaN multiple quantum well structures
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Mechanism for Radiative recombination in In(sub)0.15Ga(sub)0.85N/GaN multiple quantum well structures

机译：In（sub）0.15Ga（sub）0.85N / GaN多量子阱结构中的辐射复合机理

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摘要

We present a study of the radiative recombination in In(sub)0.15Ga(sub)0.85N/GaN multiple quantum well samples, where the conditions of growth of the InGaN quantum layers were varied. The piezoelectric field as well as short range potential fluctuations are screened via different mechanisms by donor electrons and excited electron-hole pairs. These effects account for a large part of the spectral shift with donor doping (an upward shift of the photoluminescence (PL) peak up to 0.2 eV is observed for a Si donor density of 2x10 sup 18 cm sup -3 in the well), with excitation intensity and with delay time after pulsed excitation (also shifts up to 0.2eV). It appears like 2-dimensional screening of short range potential fluctuations is needed to fully explain the data. We suggest that excitons as well as shallow donors are at least partly impact ionized by electrons in the rather strong lateral potential fluctuation.
机译：我们目前在In（sub）0.15Ga（sub）0.85N / GaN多量子阱样品中进行辐射复合研究，其中InGaN量子层的生长条件有所不同。通过施主电子和受激电子-空穴对通过不同的机制筛选了压电场以及短距离电势波动。这些效应占施主掺杂的大部分光谱偏移（对于阱中2x10 sup 18 cm sup -3的Si施主密度，观察到光致发光（PL）峰的向上偏移高达0.2 eV）。激发强度和脉冲激发后的延迟时间（也可移至0.2eV）。似乎需要对短程电势波动进行二维筛选以充分解释数据。我们建议激子和浅的供体至少部分受到相当强的侧向电势波动中的电子电离的影响。

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