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首页> 外文会议>Symposium on GaN and related alloys >Optical characterization of erbium doped III-Nitrides prepared by metalorganic molecular beam epitaxy
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Optical characterization of erbium doped III-Nitrides prepared by metalorganic molecular beam epitaxy

机译：金属有机分子束外延制备prepared掺杂的III族氮化物的光学表征

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We are currently engaged in a systematic study of the optical properties of Er doped III-nitrides prepared by metalorganic molecular beam epitaxy (MOMBE). Under below-gap excitation it was observed that GaN: Er samples iwth [O]-10 sup 20 cm sup -3 and [C] -10 sup 21 cm sup -3 luminesce at 1540 nm with an intensity of more than two orders of magnitude greater than samples with low oxygen and carbon concentrations (<10 sup 19 cm sup -3). Associated with the different oxygen and carbon concentrations were different thermal quenching behaviors and below-gap absorption bands. Interestingly, for above-gap excitation only small differences in absolute Er sup 3+ PL intensity and quenching behavior were observed for samples of varying O and C content. Initial lifetime studies were performed and showed a rather unusual short decay time of -100 mums at room temperature. In order to gain more insight in the Er sup 3+ PL, a comparison of the integrated PL intensity and lifetime was performed for the temperature range 15-500K. The result reveals that the Er sup 3+ PL quenches above room temperature due to the onset of non-radiative decay and the reduction in excitation efficiency. All samples were also investigated for visible luminescence. Red luminescence was observed from GaN: Er on sapphire substrates under below-gap excitations.
机译：我们目前正在对通过有机金属分子束外延（MOMBE）制备的掺ErⅢ族氮化物的光学性质进行系统研究。在低于能隙的激发下，观察到GaN：Er样品在1540 nm处具有[O] -10 sup 20 cm sup -3和[C] -10 sup 21 cm sup -3发光，强度大于2个数量级。比氧气和碳浓度低的样品（<10 sup 19 cm sup -3）大。与不同的氧和碳浓度相关的是不同的热猝灭行为和低于间隙的吸收带。有趣的是，对于间隙以上的激发，对于变化的O和C含量的样品，仅观察到绝对的Er sup 3+ PL强度和淬灭行为有很小的差异。进行了最初的寿命研究，结果表明在室温下，衰减非常短，为-100微米。为了获得对Er sup 3+ PL的更多了解，在15-500K的温度范围内对集成的PL强度和寿命进行了比较。结果表明，由于非辐射衰变的发生和激发效率的降低，Er sup 3+ PL在室温以上淬灭。还研究了所有样品的可见光。在低于间隙的激发下，蓝宝石衬底上的GaN：Er观察到红色发光。

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