Analysis of p⁺-AlGaAs⁺-InGaP tunneljunction for high solar concentration cascade solar cells

机译：p ^{+ -AlGaAs / n ^{+ -InGaP隧道的分析高太阳能浓度级联太阳能电池的结}}

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Ap⁺-Al_0.36Ga_0.64As⁺-In_0.5Ga_0.5P heterojunction tunnel diode with bandgap E_g=1.9 eV was fabricated. Doping levels of1×10²⁰ cm^-3 and 5×10¹⁹ cm^-3 were achieved in the p and n side of the diode usingcarbon and selenium respectively, resulting in a peak current, J_p=80 A/cm². This diode is used to interconnect the highand low band gap cells in a cascade solar cell structure. For a forwardcurrent of 20 A/cm², the expected current density at 1000Suns operation, there is only a 20 mV drop across this tunnel junction

机译：一种 p ^{+ -Al _{0.36 Ga _{0.64 As / n ^{+ -In
带隙的_{0.5 Ga _{0.5 P异质结隧道二极管
制备间隙E _{g = 1.9 eV。掺杂水平
1×10 ^{20 厘米^{-3 和5×10 ^{19 厘米
^{-3 在二极管的p和n侧使用
碳和硒，分别导致峰值电流J p
= 80 A / cm ^{2 。该二极管用于互连高压
和级联太阳能电池结构中的低带隙电池。为了向前
电流为20 A / cm ^{2 ，在1000时的预期电流密度
太阳运行时，该隧道结只有20 mV的压降}}}}}}}}}}}}}

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《International Conference on Wireless and Optical Communications, 2005. 14th Annual WOCC 2005》|2005年|p.1154-1156|共3页
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Bedair S.M.; Roberts J.C.; Jung D.; Moody B.F.; El-Masry N.A.; Katsuyama T.;
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中图分类自动化技术、计算机技术;
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1. Investigation of InGaP/(In)AlGaAs/GaAs triple-junction top cells for smart stacked multijunction solar cells grown using molecular beam epitaxy [J] . Sugaya Takeyoshi, Mochizuki Toru, Makita Kikuo, Japanese journal of applied physics . 2015,第8S1期

机译：使用分子束外延生长的智能堆叠多结太阳能电池InGaP /（In）AlGaAs / GaAs三结顶部电池的研究
2. Triple junction InGaP/InGaAs/Ge solar cells for high concentration photovoltaics application: Degradation tests of solar receivers [J] . S. Padovani, A. Del Negro, M. Antonipieri, Microelectronics & Reliability . 2010,第9a11期

机译：用于高浓度光伏应用的三结InGaP / InGaAs / Ge太阳能电池：太阳能接收器的降解测试
3. Modelling and simulation of InGaP solar cells under solar concentration: Series resistance measurement and prediction [J] . Cheknane A, Hilal HS, Charles JP, Solid state sciences . 2006,第5期

机译：InGaP太阳能电池在太阳光下的建模与仿真：串联电阻的测量与预测
4. Analysis of p/sup +/-AlGaAs/sup +/-InGaP tunnel junction for high solar concentration cascade solar cells [C] . Bedair, S.M., Roberts, . 2000

机译：高太阳浓度级联太阳能电池的p / sup +/- AlGaAs / n / sup +/- InGaP隧道结分析
5. Studies of Solution Processable InGaP-based Quantum Dots and Perovskite Solar Cells [D] . Li, Qi. 2017

机译：可溶液加工的基于InGaP的量子点和钙钛矿太阳能电池的研究
6. Internal luminescence efficiencies in InGaP/GaAs/Ge triple-junction solar cells evaluated from photoluminescence through optical coupling between subcells [O] . David M. Tex, Mitsuru Imaizumi, Hidefumi Akiyama, -1

机译：InGaP / GaAs / Ge三结太阳能电池的内部发光效率通过子电池之间的光耦合从光致发光评估
7. Graded-bandgap AlGaAs solar cells for AlGaAs/Ge cascade cells [O] . Venkatasubramanian R., Timmons M. L., Chu C. L., 1991

机译：用于AlGaAs / Ge级联电池的梯度带隙AlGaAs太阳能电池
8. Graded-bandgap AlGaAs solar cells for AlGaAs/Ge cascade cells [R] . Timmons, M. L., Venkatasubramanian, R., Colpitts, T. S., 1991

机译：用于alGaas / Ge级联电池的渐变带隙alGaas太阳能电池

Analysis of p+-AlGaAs+-InGaP tunneljunction for high solar concentration cascade solar cells

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Analysis of p⁺-AlGaAs⁺-InGaP tunneljunction for high solar concentration cascade solar cells