Effects of oxygen impurity on microcrystalline silicon films

机译：氧杂质对微晶硅膜的影响

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We have systematically studied the effects of oxygen impurities onthe crystal quality and electrical properties of hydrogenatedmicrocrystalline Si films (μc-Si:H) grown at 200° C. Two thresholdoxygen concentrations [0]s are observed: crystal quality does notdeteriorate below ≈1×10²⁰ cm^-3 of [0],while carrier density increase rapidly above ≈1×10¹⁸cm^-3 of [0]. The electron carrier density obeys 1.4 th powerlaw of [0] in the range between 1×10¹⁸ and 1×10²⁰ cm^-3. This superlinear relationship impliesthat oxygen aggregates act as donors. Lower temperature (≈200° C)formation of oxygen aggregates is discussed

机译：我们已经系统地研究了氧杂质对氢化的晶体质量和电性能微晶硅膜（μc-Si：H）在200°C下生长。两个阈值观察到氧浓度[0] s：晶体质量不佳在[0]的＆ap; 1×10 ^{20 cm ^{-3 以下时恶化，
而载流子密度迅速增加到＆ap; 1×10 ^{18
cm ^{-3 为[0]。电子载流子密度服从1.4倍功率
[0]的定律在1×10 ^{18 到1×10的范围内
^{20 cm ^{-3 。这种超线性关系意味着
氧聚集体充当供体。较低的温度（约200°C）
讨论了氧聚集体的形成}}}}}}}

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《International Conference on Wireless and Optical Communications, 2005. 14th Annual WOCC 2005》|2005年|p.784-787|共4页
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Kamei T.; Wada T.; Matsuda A.;
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中图分类自动化技术、计算机技术;
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5. Deposition and characterization of hydrogenated amorphous silicon, microcrystalline silicon and silicon-based alloy thin films. [D] . Wang, Cheng. 1991

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Effects of oxygen impurity on microcrystalline silicon films

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