• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Asia-Pacific Microwave Conference >High frequency characteristics of Cu/Ta/hydrogen silsesquioxane (HSQ) system and the effects of NH3 plasma treatment on the electrical properties for hydrogen silsesquioxane
【24h】

High frequency characteristics of Cu/Ta/hydrogen silsesquioxane (HSQ) system and the effects of NH3 plasma treatment on the electrical properties for hydrogen silsesquioxane

机译：Cu / Ta /氢倍半硅氧烷（HSQ）系统的高频特性及NH 3 等离子处理对氢硅氧烷电性能的影响

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper we use the Cu/Ta/HSQ interconnect structures for high frequency characteristics. Then, ammonia (NH3) plasma is employed for the nitridation of HSQ. The effects of NH3 plasma treatments on the high frequency characteristics (100 MHz to 20 GHz) of the interconnect structure Cu/Ta/HSQ are discussed. Among various specimens in this study, the smallest insertion loss is 1.97 dB/mm at 20 GHz for the 400 °C-annealed Cu/Ta/HSQ(NH3-plasma-treated for 50 sec). Appropriate NH3-plasma bombardment helps to form a thin SiNx barrier layer which prevents the diffusion of oxygen without increasing the dielectric constant of the Cu-HSQ interconnect system. The dielectric constant of HSQ decreases and then increases with the increase of NH3 plasma treatment time and a minimum dielectric constant of 2.2 is obtained after 50 sec NH3 plasma treatment. Finally, the crosstalk noises among all specimens were measured and the FOM was used to evaluate all specimens.
机译：在本文中，我们使用Cu / Ta / HSQ互连结构进行高频特性。然后，采用氨（NH 3）血浆用于HSQ的氮化。讨论了NH 3 等离子体处理对互连结构CU / TA / HSQ的高频特性（100MHz至20GHz）的影响。其中在该研究中各试样中，最小的插入损耗为1.97分贝/毫米，在20千兆赫的400℃退火的Cu / TA / HSQ（NH 3 50秒 - 等离子体处理的）。适当的NH3 - 等离子体轰击有助于形成薄的SINX阻挡层，其防止氧的扩散而不增加CU-HSQ互连系统的介电常数。 HSQ的介电常数降低，然后随着NH3等离子体处理时间的增加而增加，在50秒NH 3 等离子体处理后获得最小介电常数为2.2。最后，测量所有标本中的串扰噪声，并使用FOM来评估所有标本。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号