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Quantitative electrically detected magnetic resonance for device reliability studies

机译:用于设备可靠性研究的定量电检测磁共振

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Electrically detected magnetic resonance (EDMR) is a valuable tool for studying a variety of reliability problems, including the negative-bias temperature instability, total ionizing dose radiation damage, and instability in high-K gate stack-based MOS devices. Although conventional high-field EDMR can provide identification of the physical and chemical nature of electrically active reliability dominating defects in microelectronic devices, all of the EDMR studies to date have been limited by one significant shortcoming: EDMR is not quantitative. Although a large EDMR response generally corresponds to a high defect density and a small EDMR response corresponds to a low one, it has not been possible to assign actual numbers to the defect densities detected via EDMR. We've solved this problem.
机译:电检测磁共振(EDMR)是研究各种可靠性问题的宝贵工具,其中包括负偏压温度不稳定性,总电离剂量辐射损伤以及基于高K栅堆叠的MOS器件中的不稳定性。尽管常规的高场EDMR可以识别微电子设备中电活性可靠性占主导地位的缺陷的物理和化学性质,但迄今为止,所有EDMR研究都受到一个重大缺陷的局限:EDMR并非定量的。尽管大EDMR响应通常对应于高缺陷密度,而小EDMR响应对应于低缺陷密度,但不可能为通过EDMR检测到的缺陷密度分配实际数量。我们已经解决了这个问题。

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