• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>IEEE Regional Symposium on Micro and Nano Electronics >Improved growth quality of the ZnO thin films on Au nano-particles/p-Si
【24h】

Improved growth quality of the ZnO thin films on Au nano-particles/p-Si

机译：改进的Au纳米颗粒/ p-Si上ZnO薄膜的生长质量

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this study, gold thin films were grown 5 nm, 10nm, 20nm thicknesses on quartz substrate by thermal evaporation. In order to obtain Au nanoparticle films were annealed 3h and 6h at 600 °C or 800 °C in nitrogen atmosphere. After annealing gold nanoparticles were obtained varying in sizes averaged between 12-230 nm. Absorption in shift between 500nm-750nm has been observed. Au gold nanoparticles were also grown on p-Si substrate. ZnO thin films were grown by electrochemically on both gold nanoparticle/p-Si and reference pSi substrates. Characterizations of the ZnO thin films has shown that the thin films grown on Au nanoparticles has better crystal orientation, bigger grain sizes and higher absorption coefficient and device performance.
机译：在这项研究中，通过热蒸发在石英基板上生长了5纳米，10纳米，20纳米厚度的金薄膜。为了获得Au纳米颗粒膜，在氮气氛中在600℃或800℃下退火3h和6h。退火之后，获得金纳米颗粒，其平均尺寸在12-230nm之间变化。已经观察到500nm-750nm之间的位移吸收。金金纳米颗粒也生长在p-Si衬底上。 ZnO薄膜通过电化学方法在金纳米颗粒/ p-Si和参考pSi衬底上生长。 ZnO薄膜的特性表明，在Au纳米颗粒上生长的薄膜具有更好的晶体取向，更大的晶粒尺寸以及更高的吸收系数和器件性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号