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Pattern printability for reflectance degradation of Mo/Si mask blanks in EUV lithography

机译：用于在EUV光刻中降低Mo / Si掩模坯料反射率的图案可印刷性

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摘要

The effect of variations in the thickness of the multilayer of a mask blank on pattern printability was examined. The multilayer was assumed to consist of 40 Si/Mo bilayers. For a given total thickness, variations in the thicknesses of the individual Si and Mo monolayers produce such a small loss in reflectance that printability remains good for both binary and attenuated phase-shifting masks, even when such variations exist. On the other hand, variations in the total thickness shift the peak of the reflectance spectrum, which degrades the reflectance on a wafer. In this case, printability for a binary mask is determined simply by the reflectance loss on a wafer, while printability for an attenuated PSM is strongly influenced by variations in total thickness because they change the phase and attenuated reflectance.
机译：研究了掩模坯料的多层厚度的变化对图案可印刷性的影响。假设该多层由40个Si / Mo双层组成。对于给定的总厚度，单独的Si和Mo单层厚度的变化会产生很小的反射率损失，即使存在二值和衰减相移掩模，印刷性也保持良好。另一方面，总厚度的变化使反射光谱的峰移动，这降低了晶片上的反射率。在这种情况下，二进制掩模的可印刷性仅取决于晶片上的反射率损失，而衰减后的PSM的可印刷性受总厚度变化的强烈影响，因为它们会改变相位和衰减后的反射率。

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