A SiGe Ka-band cryogenic low-noise amplifier

机译：SiGe Ka波段低温低噪声放大器

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The design and characterization of a cryogenic silicon germanium integrated circuit amplifier operating at a center frequency of 22 GHz is presented. The packaged amplifier is measured at 15 K and achieves a gain of 25 dB and a noise temperature below 35 K, which is consistent with simulated performance. It is believed that this is the first reporting of a cryogenic silicon germanium low-noise amplifier operating above 10GHz and that the measured results represent the lowest reported noise temperature for any silicon based low-noise amplifier operating at these frequencies.

机译：介绍了工作在22 GHz中心频率的低温硅锗集成电路放大器的设计和特性。封装的放大器在15 K时测量，可实现25 dB的增益和35 K以下的噪声温度，这与仿真性能一致。可以相信，这是在10GHz以上工作的低温硅锗低噪声放大器的首次报道，并且测量结果代表了在这些频率下工作的任何硅基低噪声放大器的最低报告噪声温度。

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《IEEE MTT-S International Microwave Symposium》|2016年|1-3|共3页
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Wei-Ting Wong; Prasana Ravindran; Su-Wei Chang; Joseph C. Bardin;
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Cryogenics; Integrated circuit modeling; Silicon germanium; Gain; Noise measurement; Transmission line measurements;

机译：低温;集成电路建模;硅锗;增益;噪声测量;传输线测量;

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专利

1. Ka-Band Low-Noise Cryogenic Amplifier [J] . V. V. Krasnov, V. M. Minnebaev Journal of Communications Technology and Electronics . 2004,第1期

机译：Ka波段低噪声低温放大器
2. Cryogenic performance of a 3-14 GHz bipolar SiGe low-noise amplifier [J] . Aja Beatriz, Villa Enrique, de la Fuente Luisa, Cryogenics . 2019,第期

机译：3-14 GHz双极SiGe低噪声放大器的低温性能
3. Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications [J] . Ickhyun Song, Adilson S. Cardoso, Hanbin Ying, IEEE transactions on device and materials reliability . 2018,第4期

机译：利用反向模式SiGe HBT的RF低噪声放大器的低温特性用于极端环境应用
4. A SiGe Ka-band cryogenic low-noise amplifier [C] . Wei-Ting Wong, Prasana Ravindran, Su-Wei Chang, IEEE MTT-S International Microwave Symposium . 2016

机译：SiGe KA带低温低噪声放大器
5. Behavioral modeling of zinc-oxide, thin-film, field-effect transistors and the design of pixel driver, analog amplifier, and low-noise RF amplifier circuits. [D] . Calder, Leroy Alfred, III. 2010

机译：氧化锌，薄膜，场效应晶体管的行为建模以及像素驱动器，模拟放大器和低噪声RF放大器电路的设计。
6. A wideband cryogenic microwave low-noise amplifier [O] . Boris I Ivanov, Dmitri I Volkhin, Ilya L Novikov, 2020

机译：宽带低温微波低噪声放大器
7. Design of Cryogenic SiGe Low-Noise Amplifiers [O] . Weinreb Sander, Bardin Joseph C., Mani Hamdi 2007

机译：低温SiGe低噪声放大器的设计

A SiGe Ka-band cryogenic low-noise amplifier

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