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MICRO-/POLY-CRYSTALLINE SILICON MATERIALS FOR THIN FILM PHOTOVOLTAIC DEVICES: PHYSICAL PROPERTIES

机译：薄膜光伏器件的微/多晶硅材料：物理性质

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This paper discusses some of the physical properties of poly-Si films that determine their device performance. For a specific case, the compact poly-Si films grown by HWCVD at Utrecht University (UU) will be described. The causes for the naturally enhanced optical absorption of poly-Si, which makes it possible to use it as a thin film photovoltaic material, will be probed, as will the oxygen incorporation which creates donor states that have adverse effects on solar cell performance. It will be shown that extremely intrinsic poly-Si material can be made by HWCVD.

机译：本文讨论了决定其器件性能的多晶硅膜的某些物理性质。对于特定情况，将描述由乌特勒支大学（UU）通过HWCVD生长的致密多晶硅膜。将探究自然增加的多晶硅光学吸收的原因，从而有可能将其用作薄膜光伏材料，以及引入的氧将对太阳能电池的性能产生不利影响的氧掺入将被探究。将显示出可以通过HWCVD来制造极本征的多晶硅材料。

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《》|2001年|p.171-182|共12页
会议地点 Sozopol(BG)
作者
J.K. RATH;
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作者单位

Utrecht University, Debye Institute, Surface, Interface and Devices, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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MICRO-/POLY-CRYSTALLINE SILICON MATERIALS FOR THIN FILM PHOTOVOLTAIC DEVICES: PHYSICAL PROPERTIES

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