首页> 外文会议>China Semiconductor Technology International Conference >Optimization of 28nm HK/MG single wafer cleaning process
【24h】

Optimization of 28nm HK/MG single wafer cleaning process

机译:优化28nm HK / MG单晶片清洗工艺

获取原文

摘要

Wet chemical processes are used in a variety of integrated circuit (IC) fabrication processing steps, also single wafer wet processing tools have become part of the critical tool-set in advanced IC manufacturing. How to clean trench bottom efficiently and effectively is a really challenging job for wet process. In this paper, we studied and found that multi clean steps are much better than single clean step process, while optimizing D.I scan range and N2 flow would further improve the performance. It works in 28nm HK/MG NMOS clean process.
机译:湿法化学工艺用于各种集成电路(IC)制造工艺步骤中,单晶片湿法加工工具也已成为高级IC制造中关键工具集的一部分。对于湿法工艺而言,如何有效而有效地清洗沟槽底部是一项真正具有挑战性的工作。在本文中,我们研究发现,多次清洁步骤比一次清洁步骤要好得多,同时优化D.I扫描范围和N2流量将进一步提高性能。它适用于28nm HK / MG NMOS清洁工艺。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号