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Electromigration failure mechanism investigation between wafer level and plackage level reliability test in AL interconects

机译：铝互连中晶圆级和封装级可靠性测试之间的电迁移失效机理研究

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摘要

Wafer level reliability (WLR) and package level reliability (PLR) test methods are widely used for Electromigration (EM) accelerated lifetime test. Both methods on different via and metal line structures are studied in this paper. The experimental result shows single via terminated EM structure lifetime is comparable between WLR and PLR methods based on Black's equation; while stack via terminated structure and metal line structure lifetime shows difference between the two methods. By physical failure analysis (PFA), we also find different failure mechanisms between WLR and PLR methods on stack via terminated structure and metal line structure. The hypothesis is that for stack via terminated structure, large joule heating is produced at stack via area due to W-via high resistivity and WLR high stress current. The temperature even is high enough to make the small aluminum plate between stack vias melt or burnt out. But the single via terminated structure can emit heating along the long metal line and then into the oxide and cause less temperature flux. And for metal line structure, the WLR stress current is even much higher than via structures which will make the metal line over stressed and get burnt out near the line end area.
机译：晶圆级可靠性（WLR）和封装级可靠性（PLR）测试方法被广泛用于电迁移（EM）加速寿命测试。本文研究了两种在不同通孔和金属线结构上的方法。实验结果表明，基于Black方程，WLR和PLR方法的单通孔端接EM结构寿命是可比的。而通过端接结构和金属线结构的堆叠寿命显示了两种方法之间的差异。通过物理故障分析（PFA），我们还通过端接结构和金属线结构在堆栈上的WLR和PLR方法之间找到了不同的故障机制。假设是，对于通过端接结构的叠层，由于W-via高电阻率和WLR高应力电流，在叠层通孔区域会产生较大的焦耳热。温度甚至很高，足以使堆叠通孔之间的小铝板熔化或烧毁。但是，单通孔端接的结构可以沿长金属线发出热量，然后进入氧化物，从而导致较少的温度通量。对于金属线结构，WLR应力电流甚至比通孔结构高得多，这将使金属线过应力并在线端区域附近烧毁。

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