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首页> 美国卫生研究院文献>Materials >Effect of Wafer Level Underfill on the Microbump Reliability of Ultrathin-Chip Stacking Type 3D-IC Assembly during Thermal Cycling Tests
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Effect of Wafer Level Underfill on the Microbump Reliability of Ultrathin-Chip Stacking Type 3D-IC Assembly during Thermal Cycling Tests

机译：晶圆级底部填充对热循环测试过程中超薄芯片堆叠式3D-IC组件微凸点可靠性的影响

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The microbump (μ-bump) reliability of 3D integrated circuit (3D-IC) packaging must be enhanced, in consideration of the multi-chip assembly, during temperature cycling tests (TCT). This research proposes vehicle fabrications, experimental implements, and a nonlinear finite element analysis to systematically investigate the assembled packaging architecture that stacks four thin chips through the wafer level underfill (WLUF) process. The assembly of μ-bump interconnects by daisy chain design shows good quality. Results of both TCT data and the simulation indicate that μ-bumps with residual SnAg solders can reach more than 1200 fatigue life cycles. Moreover, several important design factors in the present 3D-IC package influence μ-bump reliability. Analytical results show that the μ-bump’s thermo-mechanical reliability can be improved by setting proper chip thickness, along with a WLUF that has a low elastic modulus and a small coefficient of thermal expansion.
机译：考虑到多芯片组件，在温度循环测试（TCT）期间，必须提高3D集成电路（3D-IC）封装的微凸点（μbump）可靠性。这项研究提出了车辆制造，实验工具和非线性有限元分析的方法，以系统地研究通过晶圆级底部填充（WLUF）工艺将四个薄芯片堆叠在一起的组装封装结构。通过菊花链设计组装的μ凸点互连具有良好的质量。 TCT数据和模拟结果均表明，带有残留SnAg焊料的μ凸点可达到1200多个疲劳寿命周期。此外，当前3D-IC封装中的几个重要设计因素会影响μ凸点可靠性。分析结果表明，通过设置适当的芯片厚度以及具有低弹性模量和小热膨胀系数的WLUF，可以提高μ型凸块的热机械可靠性。

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