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Study on CMP process of glass wafers with SiO2 based slurry for trench-glass-via interposer

机译：用于沟槽玻璃通孔插入件的SiO2基浆料玻璃晶片的CMP工艺研究

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This paper aims to study the chemical mechanical polishing (CMP) of glass wafer with effect of colloidal silica (SiO2) abrasive in different CMP process parameters. Conventional glass polishing usually adopts ceria (CeO2) abrasive due to its high material removal rate (MRR). However, with the development of 3D stacking integrated circuits (3DS-IC), the demand of glass wafer for trench-glass-via (TGV) instead of trench-silicon-via (TSV) has very tight specification of surface roughness and near-free-defects by CMP for next step of lithography process. Thus the ceria abrasive may not satisfy the surface quality as required in applications of glass wafer or TGV. The colloidal silica of SiO2 abrasive is considered because of its uniform particle size and familiar application in CMP for silicon wafer and thin film devices. In this study, viscosity and pH value of SiO2 slurry have been tested to characterize slurry properties. Some 40 ?? 40mm sliced substrates from 200mm (8???) glass wafers have been used for polishing characteristics and evaluation of CMP process. Relationship between the process parameters, including down pressure, platen speed and slurry flow rate have been investigated. Performance of CMP tests including MRR, surface roughness and non-uniformity have been obtained for concluding the slurry performance for CMP of glass wafers.
机译：本文旨在研究在不同的CMP工艺参数下，胶体二氧化硅（SiO2）磨料对玻璃晶片的化学机械抛光（CMP）。常规的玻璃抛光由于其高的材料去除率（MRR）通常采用二氧化铈（CeO2）研磨剂。然而，随着3D堆叠集成电路（3DS-IC）的发展，对玻璃晶片的沟槽玻璃通孔（TGV）而不是沟槽硅通孔（TSV）的要求具有非常严格的表面粗糙度和接近CMP的自由缺陷用于光刻工艺的下一步。因此，二氧化铈磨料可能不能满足玻璃晶片或TGV应用中所要求的表面质量。考虑到SiO 2磨料的胶体二氧化硅，因为其粒度均匀并且在硅晶片和薄膜器件的CMP中具有熟悉的应用。在这项研究中，已对SiO2浆料的粘度和pH值进行了测试，以表征浆料的性能。大约40 ??用200毫米（8英寸）玻璃晶片切成40毫米的基板用于抛光特性和CMP工艺评估。研究了工艺参数之间的关系，包括下降压力，压板速度和浆料流速。已获得包括MRR，表面粗糙度和不均匀性在内的CMP测试性能，可以得出用于玻璃晶片CMP的浆料性能。

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