Chemical mechanical cleaning for CMP defect reduction

机译：化学机械清洗以减少CMP缺陷

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As device geometry shrinks, defect reduction for yield improvement has always been the key focus in CMP process qualification. New post-CMP cleaning capability is demanded for meeting defect reduction requirement. To address the cleaning challenges in advanced nodes, innovation is needed. This paper reviews the innovation of Applied Materials CMP in post-CMP cleaning, from Megasonic cleaning for improving particle removal efficiency, to single wafer IPA vapor dryer for achieving water-mark free drying, and to a unique chemical mechanical cleaning (PreClean) technology for fulfilling the requirement of organic residue, particle, and nano-sized slurry ball removal in sub 10nmand beyond.

机译：随着器件几何尺寸的缩小，减少缺陷以提高产量一直是CMP工艺认证的重点。为了满足减少缺陷的要求，需要新的CMP后清洗功能。为了解决高级节点中的清洁挑战，需要进行创新。本文概述了应用材料CMP在CMP后的清洁方面的创新，从用于提高颗粒去除效率的Megasonic清洁到用于实现无水印干燥的单晶片IPA蒸气干燥器，以及用于以下目的的独特化学机械清洁（PreClean）技术：满足10纳米及以下范围内有机残留物，颗粒和纳米级浆料球去除的要求。

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《China Semiconductor Technology International Conference》|2016年|1-4|共4页
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Yufei Chen; Jianshe Tang; Ekaterina Mikhaylichenko; Brian Brown; Fritz Redeker;
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1. Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI) - an electrochemical perspective [J] . Yair Ein-Eli, David Starosvetsky Electrochimica Acta . 2007,第5期

机译：超大型系统集成（ULSI）中铜化学机械抛光（CMP）和CMP后清洗的综述-电化学角度
2. Mechanical Property Control of Low-k Dielectrics for Diminishing Chemical Mechanical Polishing (CMP)-Related Defects in Cu-Damascene Interconnects [J] . Ken-ichiro HIJIOKA, Fuminori ITO, Masayoshi TAGAMI, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第4BPt1期

机译：低k介电材料的机械性能控制，可减少Cu-Damascene互连中与化学机械抛光（CMP）相关的缺陷
3. XPS Study of Tungsten and Barrier Film Transition at Various Stages of Chemical Mechanical Polishing Endpoint and of Surface Compositions Post-CMP Cleaning [J] . Cui Ji, Huang Helin, Zhuang Yun, ECS Journal of Solid State Science and Technology . 2017,第9期

机译：XPS在CMP清洗后各个阶段钨和屏障薄膜过渡研究
4. Chemical mechanical cleaning for CMP defect reduction [C] . Yufei Chen, Jianshe Tang, Ekaterina Mikhaylichenko, China Semiconductor Technology International Conference . 2016

机译：CMP缺陷减少化学机械清洁
5. Investigation of planarization characteristics and novel defects in metal CMP affected by physical, chemical and mechanical factors. [D] . Cheemalapati, Krishnayya. 2007

机译：研究物理，化学和机械因素对金属CMP的平面化特性和新缺陷的影响。
6. Preliminary Study on Fluidized Bed Chemical Mechanical Polishing (FB-CMP) Process for Stainless Steel 304 (SS304) [O] . Taekyoung Kim, Hyunseop Lee 2020

机译：不锈钢304（SS304）流化床化学机械抛光（FB-CMP）工艺初步研究（SS304）
7. Nanoparticles removal in post-CMP (Chemical-Mechanical Polishing) cleaning [O] . Ng Dedy 2006

机译：CMP后（化学机械抛光）清洁中的纳米颗粒去除

Chemical mechanical cleaning for CMP defect reduction

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