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首页> 外文期刊>ECS Journal of Solid State Science and Technology >XPS Study of Tungsten and Barrier Film Transition at Various Stages of Chemical Mechanical Polishing Endpoint and of Surface Compositions Post-CMP Cleaning
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XPS Study of Tungsten and Barrier Film Transition at Various Stages of Chemical Mechanical Polishing Endpoint and of Surface Compositions Post-CMP Cleaning

机译：XPS在CMP清洗后各个阶段钨和屏障薄膜过渡研究

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摘要

The present study aims to determine wafer surface film compositions at various stages of optical end point during W CMP process. Wafers taken at reflectance peak time, peak plus time, slope time, end point time and overpolish time were analyzed by XPS at various locations of the wafer, with special focus on the compositional identification of the visual "residues". Results showed that W and barrier film removal proceed in a non-uniform manner at XPS probe depth scale of similar to 6 nm. At the optical reflectance peak time the wafer is substantially covered with W, and Ti barrier only appeared on the edge of the wafer due to center slow - edge fast removal profile of the polishing. Using peak to end point time to calculate Ti barrier removal rate may under-estimate the true barrier polishing time and led to artificially lower barrier rate. Ammonia-based post CMP cleaning process and its impact on W film surface composition is also discussed. (c) 2017 The Electrochemical Society. All rights reserved.
机译：本研究旨在在W CMP工艺期间在光学终点的各个阶段确定晶片表面膜组合物。通过XPS在晶片的各个位置分析XPS的反射率峰值时间，峰值加时间，倾斜时间，终点时间和过漏时间的晶片，特别关注视觉“残留物”的组成识别。结果表明，W和屏障薄膜去除以非均匀的方式在XPS探针深度等级中以相似的6nm进行。在光学反射率峰值时，晶片基本上覆盖有W，并且由于抛光的中心慢边缘快速移除轮廓，Ti屏障仅出现在晶片的边缘上。使用峰值到终点时间来计算Ti屏障去除率可能低估真实屏障抛光时间并导致人工较低的屏障速率。还讨论了基于氨的后CMP清洁过程及其对W薄膜表面组成的影响。 （c）2017年电化学协会。版权所有。

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