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Aqueous Developers for Positive Tone Ultrathin Chemically Amplified EUV Resists

机译：正色调超薄化学放大EUV抗蚀剂的水性显影剂

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Dissolution of ultrathin exposed EUV photoresist can deviate from the bulk regime due to the modulating influence of the adjacent top and bottom interfaces, which can eventually dominate the behavior of the entire film. Furthermore, use of TMAH 0.26N as aqueous developer for CARs has remained the industry standard without thorough investigation of other possible aqueous bases and concentrations. In this work, we provide a detailed description of the interfacial dissolution behavior of model ultrathin EUV resists in a variety of tetraalkylammonium-based developers, using a representative open source polymer platform. Dissolution kinetics measured using QCM (quartz crystal microbalance) with and without added PAG highlight the convolution of vertical distribution of resist additives with their dissolution inhibition effect throughout the resist film. Results for the local dissolution at the resist-substrate interface using interrupted development and AFM measurements are provided and explained in terms of confinement effects (polymer chain mobility, vacid diffusion) and polymer-substrate interactions. This work can serve as initial guidance to understand the attainable interfacial dissolution modulation afforded by a rational developer selection and a matching EUV resist design.
机译：由于相邻顶部和底部界面的调节影响，超薄暴露的超薄光致抗蚀剂的溶解可以偏离大量方案，这可能最终主导整个膜的行为。此外，在没有彻底调查其他可能的水基和浓度的情况下，使用TMAH 0.26N作为汽车的水性显影剂仍然是行业标准。在这项工作中，我们提供了使用代表性开源聚合物平台在各种四烷基铵基显影剂中模型超薄EUV抗蚀剂的界面溶出行为的详细描述。使用QCM（石英晶体微稳定）测量的溶出动力学，无需添加PAG，突出了抗蚀剂添加剂垂直分布的卷积，其在整个抗蚀剂膜中具有溶解抑制作用。提供了使用中断开发和AFM测量的抗蚀剂衬底界面处的局部溶解的结果，并以限制效应（聚合物链迁移率，近羟扩散）和聚合物 - 底物相互作用而解释。这项工作可以作为理性显影剂选择和匹配的EUV抗蚀剂设计所提供可获得的界面溶出调节的初步指导。

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