High Endurance Self-Heating OTS-PCM Pillar Cell for 3D Stackable Memory

机译：用于3D可堆叠存储器的高耐用性自加热OTS-PCM支柱单元

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For the first time published, high endurance OTS (ovonic threshold switch, here, TeAsGeSiSe-based) is integrated with PCM (here, doped Ge2Sb2Te5) to form a 3D stackable pillar type device. With the help of an etch buffer layer and a damage-free pillar RIE process, we achieved 100% array yield without OTS/PCM composition modification. Anneal tests show this one-selector/one-resistor (1S1R) pillar device is BEOL-compatible.We report excellent electrical performance by 1S1R OTS-PCM device; selector provides the fast turn on/off speed which enables 10ns fast RESET speed, program endurance is 10^{9 cycles, and read endurance is higher than 10^{11 cycles.}}

机译：首次发布，高耐久性OTS（纵阈开关，这里，基于初级阈值）与PCM（这里，掺杂GE2SB2TE5）集成，以形成3D可堆叠柱型器件。借助蚀刻缓冲层和无损坏的柱子RIE过程，我们在没有OTS / PCM成分改性的情况下实现了100％阵列产量。退火试验显示该单选器/单电阻（1S1R）支柱装置是BEOL兼容的.WE通过1S1R OTS-PCM设备报告出色的电气性能;选择器提供快速开启/关闭速度，使10NS快速重置速度，程序耐久性为10 ^{9
循环，读取耐久性高于10
^{11
循环。}}

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《IEEE Symposium on VLSI Technology》|2018年|205-206|共2页
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C. W. Yeh; W. C. Chien; R. L. Bruce; H. Y. Cheng; I. T. Kuo; C. H. Yang; A. Ray; H. Miyazoe; W. Kim; F. Carta; E. K. Lai; M. BrightSky; H. L. Lung;
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Phase change materials; Video recording; Thermal stability; Annealing; Buffer layers; Electrodes; Three-dimensional displays;

机译：相变材料;视频记录;热稳定性;退火;缓冲层;电极;三维显示;

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专利

1. A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory [J] . Wei-Chih Chien, Chiao-Wen Yeh, Robert L. Bruce, Electron Devices, IEEE Transactions on . 2018,第11期

机译：用于3D可堆叠存储器的OTS-PCM支柱单元的研究
2. Proposal of stacked type Fe-FET reconfigurable logic circuit featured with parallel processing within one silicon pillar using modified process technology of 3D NAND flash memory [J] . Tomohiro Yokota, Shigeyoshi Watanabe Contemporary Engineering Sciences . 2018,第17a20期

机译：建议使用3D NAND闪存的改进工艺技术在一个硅柱内进行并行处理的堆叠式Fe-FET可重构逻辑电路
3. Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink [J] . Park Jun-Young, Yun Dae-Hwan, Kim Seong-Yeon, IEEE Electron Device Letters . 2019,第2期

机译：使用插入式支柱形散热器抑制3-D V-NAND闪存中的自热效应
4. High Endurance Self-Heating OTS-PCM Pillar Cell for 3D Stackable Memory [C] . C. W. Yeh, W. C. Chien, R. L. Bruce, IEEE Symposium on VLSI Technology . 2018

机译：高耐久性自加热OTS-PCM支柱电池，用于3D可堆叠记忆
5. High Performance Hybrid Memory Systems with 3D-stacked DRAM [D] . Vasilakis, Evangelos. 2019

机译：具有3D堆叠DRAM的高性能混合存储系统
6. Porous Structures in Stacked Crumpled and Pillared Graphene-Based 3D Materials [O] . Fei Guo, Megan Creighton, Yantao Chen, -1

机译：堆叠折皱和柱状石墨烯基3D材料中的多孔结构
7. Thermosonic direct Cu pillar bonding for 3D die stacking [O] . A. Roshanghias, A. Rodrigues, S. Schwarz, 2020

机译：用于3D模具堆叠的热循环直接Cu柱粘合
8. Cycling Endurance of SONOS Non-Volatile Memory Stacks Prepared with Nitrided SiO(2)/Si(100) Intefaces;Electron Device Letters [R] . Habermehl, S. , Nasby, R. D. , Rightley, M. J. 1999

机译：用氮化siO（2）/ si（100）界面制备的sONOs非易失性存储器堆栈的循环耐久性;电子器件字母

High Endurance Self-Heating OTS-PCM Pillar Cell for 3D Stackable Memory

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