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首页> 外文会议>Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV >Impact of varying barrier thickness on the optical characteristics of multilayer InAs/GaAs QDIPs
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Impact of varying barrier thickness on the optical characteristics of multilayer InAs/GaAs QDIPs

机译：不同屏障厚度对多层INAS / GaAs Qdips光学特性的影响

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An investigation of the optical properties of the multi stacked InAs quantum dot (QD) based photodetectors has been done by changing the capping layer composition and thickness. There is an improvement obtained in the structure and distribution of InGaAs capped QDs than the conventional GaAs capped QDs. It is due to the inhibition of In-Ga intermixing and lesser indium segregation towards the wetting layer in case of InGaAs capping. Here, the combined InGaAs/GaAs capping layer thickness has been varied to investigate the effect of the vertical strain-coupling and QD size distribution. All samples are grown by solid source molecular beam epitaxy with a V/III flux ratio of 50. A variation in InGaAs/GaAs capping layer is done by keeping the total thickness constant at 12 nm, and 18 nm. The ground state photoluminescence emission peak for the 3 nm InGaAs capped QDs have pronounced redshift than the 2 nm InGaAs capped QDs. However, the redshift is more in case of total capping layer thickness of 12 nm (i. e. 36 nm), than the 18 nm capped sample (i. e. 14 nm). It is observed due to better coupling in case of lower capping layer thickness and hence better dot size. Activation energy calculated from the temperature dependent photoluminescence study also gives incremental trend with an increase in coupling (18nm: 163.308meV, and 12nm: 215.53meV), which is attributed to lowering of QD ground state due to change in capping layer thickness. Hence the 12nm capped device with 3nm InGaAs capping gives better results probably due to better strain propagation, and hence better dot distribution.
机译：通过改变覆盖层组合物和厚度来完成对基于多堆叠INA量子点（QD）的光电探测器的光学性质的研究。 InGaAs的结构和分布的结构和分布比传统的GaAs升压QDS具有改进。在InGaAs封端的情况下，由于抑制In-Ga混合和较小的铟偏析朝向润湿层。这里，已经改变了inGaAs / GaAs覆盖层厚度以研究垂直应变耦合和QD尺寸分布的效果。所有样品都是由固体源分子束外延生长的V / III磁通比为50.通过将总厚度常数保持在12nm和18nm的总厚度恒定来完成InGaAs / GaAs覆盖层的变化。对于3nm IngaAs的地面光致发光发射峰值升高的QDS具有比2nm Ingaas盖QDS的射频发音。然而，在总覆盖层厚度为12nm（即36nm）的情况下，隆频更加多于18nm升压样品（即14 nm）。由于在较低的覆盖层厚度和更好的点尺寸的情况下，由于更好的耦合而被观察到。从温度依赖性光致发光研究计算的激活能量还具有增加耦合（18nm：163.308mev和12nm：215.53mev）的增量趋势，这归因于由于覆盖层厚度的变化而降低QD接地状态。因此，具有3nm IngaAs封端的12nm封端的装置可能由于更好的应变传播而产生更好的结果，因此更好的点分布。

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