6H-SiC junction field effect transistor for high-temperature applications

机译：用于高温应用的6H-SiC结场效应晶体管

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6H SiC junction field effect transistors have been fabricated. The electrical characteristics of the JFET were measured for temperatures of up to 600°C. The devices showed good saturation characteristics over the whole temperature range. A maximum transconductance of 9.7 mS/mm at room temperature and of 3 mS/mm at 600°C has been found for a JFET with 12.7 μm gate length.

机译：已经制造了6H SiC结场效果晶体管。测量JFET的电气特性，用于高达600℃的温度。该器件在整个温度范围内显示出良好的饱和特性。在室温下为9.7ms / mm的最大跨导和600°C的3ms / mm，对于具有12.7μm的栅极长度，已经找到了600°C的3ms / mm。

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《International conference on SiC and related materials》|1994年||共3页
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中图分类硅酸盐工业;
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6H-SiC junction field effect transistor for high-temperature applications

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