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Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors

机译：6H-SiC结场效应晶体管中辐射深中心的光学表征

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摘要

Electroluminescence studies were carried out as a function of bias and temperature to understand the nature of deep centres in 6H-SiC n-channel junction field-effect transistors (FETS) for high-power applications. Vanadium impurities in different configurations were suggested to be responsible for the levels found. The contributions of hot and cold carriers were distinguished by biasing the devices both in the transistor-like and in the diode-like configurations. This allowed us to spatially localize the deep centres inside the device structure. In the transistor-like configuration, two broad emission bands (1.1-1.7 eV and 2.5-3 eV), superimposed to the contribution arising from hot carrier intraband transitions, were detected. The A band at 1.17 eV (observed only in the transistor-like configuration) was attributed to a radiative transition between an excited level and its ground state of a vanadium centre located in the n-type conductive channel. The B (1.32 eV) and C (1.62 eV) bands originated from the space-charge region of the p-n junctions in both the configurations and, contrary to the A band, they were characterized by a thermal capture barrier (180 meV) which inhibits the luminescence in the diode-like configuration at temperatures below 200 K.
机译：电致发光研究是作为偏置和温度的函数进行的，以了解用于大功率应用的6H-SiC n沟道结型场效应晶体管（FETS）深中心的性质。建议采用不同构型的钒杂质来确定所发现的含量。通过在晶体管状和二极管状配置中对器件施加偏压，可以区分热载流子和冷载流子的贡献。这使我们能够在空间上定位设备结构内部的深层中心。在类似晶体管的配置中，检测到两个较宽的发射带（1.1-1.7 eV和2.5-3 eV），叠加在由热载带内跃迁引起的贡献上。 1.17 eV的A波段（仅在类似晶体管的结构中观察到）归因于激发能级与其位于n型导电沟道中的钒中心的基态之间的辐射跃迁。 B（1.32 eV）和C（1.62 eV）谱带均来自两种结构中pn结的空间电荷区域，与A谱带相反，它们的特征是具有热捕获势垒（180 meV），可抑制在低于200 K的温度下呈二极管状配置的发光。

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