首页> 外文会议>IEEE Lasers and Electro-Optics Society Annual Meeting >Epitaxial liftoff of GaAs detectors onto silicon integrated circuits
【24h】

Epitaxial liftoff of GaAs detectors onto silicon integrated circuits

机译:GaAs探测器的外延升降机到硅集成电路上

获取原文

摘要

The seperation of thin film epitaxial devices from the growth substrated is called epitaxial lift off, and the subsequent transfer and bonding of these thin film devices to smooth substrates such as Si integrated circuits is studied.
机译:从生长基质的薄膜外延装置的分离称为外延升降机,并研究了这些薄膜装置的随后转移和粘合到诸如Si集成电路的平滑基板。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号