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Selective Wet-Etch of Silicon Nitride Passivation Layers

机译：硅氮化硅钝化层的选择性湿法蚀刻

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摘要

Selective removal of silicon nitride passivation layers is of major importance in failure analysis of semiconductor devices. Typical applications are: cleaning of the die surface for optical microscopy and for removal of superficial contamination, electron microscopy, liquid crystals, voltage contrast, electron beam testing, mechanical microprobing, and selective layer-by-layer strip. A new wet-etch for silicon nitride passivation layers has been developed, which is fully selective over aluminum metallization and which preserves full device functionality after passivation removal. For the first time in the failure analysis literature, the chemical recipe and the etching procedure are given in details. This etchant has been experimented for more than two years in many failure analysis laboratories on a wide spectrum of discrete and integrated semiconductor devices, always with excellent results. Its capability and efficiency are illustrated by two failure analysis case histories.
机译：选择性去除氮化硅钝化层是半导体器件故障分析的主要重要性。典型的应用是：清洁光学显微镜的模具表面和去除浅表污染，电子显微镜，液晶，电压对比度，电子束测试，机械微胶和选择性层旁边条带。已经开发出用于氮化硅钝化层的新湿法蚀刻，其在铝金属化上完全选择性，并且在去除钝化后保留完整的器件功能。首次在失败分析文献中，详细给出了化学配方和蚀刻程序。这种蚀刻剂在许多故障分析实验室上进行了两年多的时间，始终具有出色的效果。其能力和效率由两个故障分析案例历史说明。

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