A dual type low Ron UMOFET, driven by a gate voltage of 2.5v, is realized with TSSOP-8 package. (TPCS8201) usage is mainly for battery circuits fo mobile equipment. Low Ron is achieveed by submicron trench structures. Low Vth and high gate eliability are realized by multiple thin gate layers of silicon dioxide and silicon nitride. Electrical characteristics of the TPCS8201 are VDSs=20v, VTH-1.2vmax, Ron=40m omiga max, at VGS=2.5v for each circuit.
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