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首页> 外文会议>Annual symposium on photomask technology >Characterization of a non-chemically amplified resist for photomask fabrication using a 257 nm optical pattern generator
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Characterization of a non-chemically amplified resist for photomask fabrication using a 257 nm optical pattern generator

机译：使用257nm光学图案发生器对光掩模制造的非化学放大抗蚀剂的表征

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I-line optical pattern generators using non-chemically amplified resists have become the workhorses for high throughput mask fabrication. The demand for smaller and more uniform features on photomasks has driven the development of a 257 nm optical pattern generator. A non-chemically amplified resist is being developed to maximize the performance of this new 257 nm mask tool. Resist characterization and lithography simulation are being used to formulate a non-chemically amplified resist for 257 nm optical pattern generators. Non-chemically amplified resists are advantageous for us in mask fabrication due to their storage and post-exposure stability. Chemically amplified resists may provide higher performance but they also require environmental mini-environments and a post-exposure bake equipment not commonly present in mask houses. Diazonapthoquinone (DNQ)/ novolak resists have not been used for DUV Integrated Circuit (IC) applications mainly due to the low sensitivity and the strong absorbance of the DNQ photoactive compound (PAC) at 248 nm. However, a 2,1,4 DNQ based resist has been characterized that bleaches at 257 nm and inhibits novolak. The photoproduct of the 2,1,4 DNQ PAC is much more transparent at 257 nm than 248 nm. Novolak resin is too strongly absorbing for use in formulating efficient 248 nm resists, but novolak has an absorbance minimum at 257 nm that provides transparency similar to poly (hydroxystyrene). Lithography simulation is being used to develop a non-chemically amplified resist to minimize the expensive iteration of manufacturing trials. An exposure system using a 257 nm frequency doubled Ar laser system has been constructed to study the resist photokinetics. Dill exposure parameters (A, B and c) have been extracted for a 2,1,4 DNQ/ novolak based resist. Dissolution rate measurements have been made with a DRM developed at the University of Texas at Austin. Simulation is used to determine the optimal resist absorption, bleaching, dose and dissolution properties to maximize resolution. It is possible to formulate a high performance resist for 257nm if care is taken in optimization of the formulation.
机译：使用非化学放大抗蚀剂的I线光学图案发生器已成为高通量掩模制造的工作研磨机。对光掩模的较小和更均匀特征的需求推动了257nm光学图案发生器的开发。正在开发出非化学放大的抗蚀剂以最大限度地提高该新型257nm掩模工具的性能。抗蚀剂表征和光刻模拟用于制定用于257nm光学图案发生器的非化学放大抗蚀剂。由于其储存和曝光后稳定性，非化学放大的抗蚀剂对我们的掩模制造是有利的。化学放大的抗蚀剂可以提供更高的性能，但它们还需要环境迷你环境和不常见在面具房屋中的暴露后烘烤设备。 Duazonapthoquinone（DNQ）/酚醛清漆抗蚀剂未用于DUV集成电路（IC）应用，主要是由于DNQ光活性化合物（PAC）在248nm处的低灵敏度和强烈吸光度。然而，已经表征了2,1,4个DNQ的抗蚀剂，其中漂白在257nm并抑制诺瓦拉克。 2,1,4 DNQ PAC的光调节在257nm比248nm处更透明。酚醛清漆树脂过于强烈地吸收，用于配制248nm抗蚀剂，但诺瓦拉克在257nm处具有吸光度最小，提供与聚（羟基苯乙烯）类似的透明度。光刻模拟正在采用非化学放大的抗蚀剂，以最大限度地减少制造试验的昂贵迭代。使用257nm频率加倍AR激光系统的曝光系统已经构建以研究抗蚀剂光电。已经提取了莳萝暴露参数（A，B和C），用于2,1,4 DNQ /酚醛清漆基抗蚀剂。已经在奥斯汀德克萨斯大学开发的DRM进行了溶出速率测量。模拟用于确定最佳抗蚀剂吸收，漂白剂，剂量和溶解性能，以最大化分辨率。如果在优化制剂中考虑护理，则可以为257nm制备高性能抗蚀剂。

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