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首页> 外文会议>Conference on optical microlithography >Proposal of a composite phase-shifting mask for 0.15-um hole-pattern delineation using KrF exposure
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Proposal of a composite phase-shifting mask for 0.15-um hole-pattern delineation using KrF exposure

机译：使用KRF暴露的0.15μm空穴模式描绘的复合相移掩模的提议

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摘要

We propose a new pattern delineation technology where composite phase-shifting masks are used for KrF exposure. Half-tone phase-shifting masks (HTPSMs) are widely used for delineating 0.20- to 0.25-micrometer hole patterns. However, the process latitude of the pattern transfer for 0.18- micrometer hole patterns or smaller is very tight, and it is quite difficult to delineate such small patterns using conventional HTPSMs with KrF exposure for mass production. However, by using a newly developed composite phase-shifting mask, we have been able to simultaneously delineate 0.18- micrometer or smaller isolated hole patterns and dense hole patterns with sufficient process latitude. Two types of phase- shifting technology were integrated in a single phase-shifting mask that had both a Cr region and a halftone region. For the delineation of isolated hole patterns, eight outrigger sub- slots were octagonally arrayed around each isolated hole pattern (00-HTPSM: octagonal outrigger HTPSM). For the delineation of dense hole patterns, an alternating phase assignment was applied (alternating PSM). We found through both simulation and experiment that the focus latitude could be expanded by the use of this composite phase-shifting mask.
机译：我们提出了一种新的模式描绘技术，其中复合相移掩模用于KRF暴露。半色调相移掩模（HTPSMS）广泛用于划定0.20至0.25微米的孔图案。然而，图案转移的过程纬度为0.18微米的孔图案或更小是非常紧密的，并且非常难以使用常规HTPSMS与批量生产的KRF暴露进行常规HTPSMS来描绘这种小型图案。然而，通过使用新开发的复合相移掩模，我们已经能够同时描绘0.18微米或更小的隔离孔图案和具有足够的工艺纬度的密集孔图案。两种相移技术集成在具有CR区域和半色调区域的单个相移掩模中。对于隔离孔图案的描绘，八个突出子槽周围围绕每个隔离孔图案（00-htpsm：八角形突出HTPSM）。对于致密孔图案的描绘，施加了交替相位分配（交替PSM）。我们通过模拟和实验发现，通过使用该复合相移掩模可以扩展焦距。

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