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首页> 外文会议>Optical Microlithography XI >Proposal of a composite phase-shifting mask for 0.15-um hole-pattern delineation using KrF exposure
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Proposal of a composite phase-shifting mask for 0.15-um hole-pattern delineation using KrF exposure

机译：关于使用KrF曝光进行0.15um孔图案描绘的复合相移掩模的建议

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Abstract: We propose a new pattern delineation technology where composite phase-shifting masks are used for KrF exposure. Half-tone phase-shifting masks (HTPSMs) are widely used for delineating 0.20- to 0.25-micrometer hole patterns. However, the process latitude of the pattern transfer for 0.18- micrometer hole patterns or smaller is very tight, and it is quite difficult to delineate such small patterns using conventional HTPSMs with KrF exposure for mass production. However, by using a newly developed composite phase-shifting mask, we have been able to simultaneously delineate 0.18- micrometer or smaller isolated hole patterns and dense hole patterns with sufficient process latitude. Two types of phase- shifting technology were integrated in a single phase-shifting mask that had both a Cr region and a halftone region. For the delineation of isolated hole patterns, eight outrigger sub- slots were octagonally arrayed around each isolated hole pattern (00-HTPSM: octagonal outrigger HTPSM). For the delineation of dense hole patterns, an alternating phase assignment was applied (alternating PSM). We found through both simulation and experiment that the focus latitude could be expanded by the use of this composite phase-shifting mask. !8
机译：摘要：我们提出了一种新的图案描绘技术，其中将复合相移掩模用于KrF曝光。半色调相移掩模（HTPSM）被广泛用于描绘0.20至0.25微米的孔图案。但是，对于0.18微米或更小的孔图案，图案转移的工艺范围非常狭窄，并且很难使用带有KrF曝光的常规HTPSM来划定这样的小图案，以进行批量生产。但是，通过使用新开发的复合相移掩模，我们能够以足够的加工范围同时描绘出0.18微米或更小的隔离孔图形和致密孔图形。两种相移技术都集成在具有Cr区域和半色调区域的单个相移掩模中。为了描绘孤立的孔型，在每个孤立的孔型周围以八边形排列八个支腿子槽（00-HTPSM：八边形支腿HTPSM）。为了勾勒出密集的孔图案，应用了交替的相位分配（交替的PSM）。通过仿真和实验，我们发现通过使用这种复合相移掩模可以扩大聚焦范围。 ！8

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