1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

机译：1.3μminas / gaas量子点激光器和分子束外延生长的vcsels

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Molecular beam epitaxy growth of InAs/InGaAs quantum dot (QD) structures on GaAs substrates for 1.3 μm laser applications is discussed. Long-stripe edge-emitting lasers demonstrate low threshold current density (< 100 A/cm~2), high differential efficiency (>50%) and low internal loss (～1-2cm~(-1)). Maximum output continuous-wave power for broad-area lasers is as high as 2.7 W. Narrow stripe (7 μm) lasers demonstrate single transverse mode operation with the maximum kink-free power of 110mW. 1.3μm vertical cavity surface emitting lasers were successfully fabricated from the structures with three QD planes inserted into the optical microcavity with AlO-GaAs Bragg reflectors. The output power is 220 mW at a drive current of 2.4mA under pulsed mode for the device with the 8 x 8 μm oxidized aperture.

机译：讨论了GaAs基板上的InAs / InGaAs量子点（QD）结构的分子束外延生长为1.3μm激光应用。长条形边缘发光激光器显示出低阈值电流密度（<100A / cm〜2），高差分效率（> 50％）和低内部损耗（〜1-2cm〜（-1））。广域激光器的最大输出连续波功率高达2.7W。窄条纹（7μm）激光器展示单横向模式操作，最大的无扭结功率为110mW。 1.3μm垂直腔表面发射激光器从具有三个QD平面插入光学微腔的结构，与Alo-GaAs Bragg反射器一起成功地制造出结构。输出功率在具有8×8μm氧化孔的器件的脉冲模式下的2.4mA的驱动电流下为220mW。

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《International conference on molecular beam epitaxy》|2001年||共7页
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D. Bimberg; J.A. Lott; Zh.I. Alferov; N.N. Ledentsov; A.F. Tsatsulnikov; M.V. Maximov; Yu.M. Shernyakov; Yu.G. Musikhin; B.V. Volovik; S.S. Mikhrin; A.R. Kovsh; N.A. Maleev; A.E. Zhukov; V.M. Ustinov;
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中图分类材料;
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low dimensional structures; laser diodes; semiconducting III-V materials; molecular beam epitaxy;

机译：低尺寸结构;激光二极管;半导体III-V材料;分子束外延;

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1. 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy [J] . V.M.Ustinov, A.E.Zhukov, N.A.Maleev Journal of Crystal Growth . 2001,第期

机译：通过分子束外延生长的1.3μmInAs / GaAs量子点激光器和VCSEL
2. High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy [J] . 季海铭, 杨涛, 曹玉莲, 中国物理快报：英文版 . 2010,第002期

机译：分子束外延生长的高特征温度1.3μmInAs / GaAs量子点激光器
3. Low threshold current density 1.3μm InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy [J] . F.Y. Chang, J.D. Lee, H.H. Lin Electronics Letters . 2004,第3期

机译：气体源分子束外延生长具有InGaP包覆层的低阈值电流密度1.3μmInAs / InGaAs量子点激光器
4. 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy [C] . D. Bimberg, J.A. Lott, Zh.I. Alferov, International conference on molecular beam epitaxy . 2001

机译：1.3μminas / gaas量子点激光器和分子束外延生长的vcsels
5. Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers. [D] . Mirin, Richard Paul. 1996

机译：InGaAs量子点和量子点激光器的交替分子束外延和表征。
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响
7. Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications [O] . Mokerov V.G., Fedorov Yu.V., Hook A.V., 2000

机译：在高频应用中，在成核量子点阈值以下和附近的InAs层厚度下，调制掺杂N-AlGaAs /（InAs / GaAs）/ GaAs超晶格的分子束外延

1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

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