Si nanocrystal-doped SiO{sub}2, or SiO{sub}2:Si-nc, has become a key material for developing practical Si light sources. At present, an open problem regarding this material is its low brightness. In this work, we worked out a method of CeF{sub}3 doping to overcome this problem. After the double-side doping of CeF{sub}3 and hydrogenation, the photoluminescence (PL) intensity of Si nanocrystals from SiO{sub}2:Si-nc was enhanced by a factor of ～15. A CeF{sub}3-doped multilayered structure of Si-nc:SiO{sub}2 was then proposed, aiming at a tunable and highly luminescent Si light source. It was found that as compared to the monolayer SiO{sub}2:Si-nc, the PL intensity of the multilayered sample with the same total film thickness could be enhanced by a factor of ～120 after CeF{sub}3 doping and hydrogenation.
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