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首页> 外文会议>International Congress on Applications of Lasers and Electro-Optics >LARGE AREA LASER INTERFERENCE PATTERNING FOR PERIODIC GROWTH OF INDIVIDUAL ZNO NANOWIRES
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LARGE AREA LASER INTERFERENCE PATTERNING FOR PERIODIC GROWTH OF INDIVIDUAL ZNO NANOWIRES

机译：大面积激光干涉图案，用于各个ZnO纳米线的周期性生长

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摘要

The growth of semiconductor ZnO nanowires in a periodic fashion is of great interest for many applications such as solar cells, field emission devices, light emitting diodes, and piezonanogenerators. Novel laser interference lithography techniques for the site-selective growth of ZnO nanowires on Gallium Nitride (GaN) substrate are described. A nanosecond pulsed Nd:YAG laser with 266 nm wavelength is used in the experiments. Both laser interference ablation of GaN substrates and laser interference lithography of photoresist masks on GaN substrates are conducted to control the position and periodicity of grown individual ZnO nanowires. Simulations of both processes are presented. The nanowires, grown using a low temperature hydrothermal decomposition method on both types of substrates, follow the designed pattern, with a high degree of co ntrol in size, dimensionality, and uniformity. Well patterned and aligned individual ZnO nanowires on areas spanning one square-centimeter scale and onesquare-decimeter scale can be achieved by laser interference ablation and lithography respectively.
机译：半导体ZnO纳米线以周期性的方式对许多应用具有极大的兴趣，例如太阳能电池，场发射装置，发光二极管和压电酶生成器。描述了用于氮化镓（GaN）底物上的ZnO纳米线的位点选择生长的新型激光干扰光刻技术。在实验中使用纳秒脉冲Nd：具有266nm波长的YAG激光器。进行GaN基板的GaN基板和激光干扰光刻的激光干扰消融GaN基板上的光致抗蚀剂掩模的光刻，以控制生长的单独ZnO纳米线的位置和周期性。呈现了两种过程的模拟。在两种类型的基材上使用低温水热分解方法生长的纳米线，遵循设计的图案，具有高度的CO NTROL大小，维度和均匀性。可以通过激光干扰消融和光刻来实现跨越一个平方厘米和14位尺度的区域上的良好图案化的单个ZnO纳米线。

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