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High reliability in low noise InGaP gated PHEMTs

机译：低噪音Ingap GateD Phemts的高可靠性

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This work presents a study on the high reliability of noise characteristics of In GaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In{sub}0.49Ga{sub}0.51P/In{sub}0.15Ga{sub}0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25×160 μm{sup}2. The DC-stress conditions are 1) V{sub}(DS) = 6V, V{sub}(GS) = OV and 2) I{sub}G =～8 mA (5OmA/mm). The ranging of thermal-stress is from 100 °C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is V{sub}(DS) = 2 V, I{sub}(DS) =10mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise-figure, NF{sub}(min) and associated power gain, G{sub}a after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.
机译：这项工作提出了通过DC和热应力证明了间隙低噪声PHEMT中噪声特性的高可靠性的研究。我们使用的设备位于{sub} 0.49ga {sub} 0.51p / in {sub} 0.15ga {sub} 0.85，栅极尺寸为0.25×160μm的栅极尺寸{sup} 2。直流应力条件为1）v {sub}（ds）= 6v，v {sub}（gs）= ov和2）i {sub} g =〜8 mA（5oma / mm）。热应激的范围为100°C至250℃。在12GHz和DC偏置条件下测量噪声特性是v {sub}（ds）= 2v，i {sub}（ds）= 10ma。设备的关键噪声效应参数是设备，源极/栅极电阻，栅极到源电容和固有跨导的深陷阱行为。我们通过解释这些关键参数的变化来展示Ingap低的可靠性，在DC和热应力之后展示了最小噪声系数，NF {Sub}（Min）和相关功率增益，G {Sub} A的非常小的变化。噪音phemts。

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