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首页> 外文会议>Annual IEEE Gallium Arsenide Integrated Circuit Symposium >0.1 μm InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology
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0.1 μm InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology

机译：0.1μmingaas / Inalas / Inp Hemt MMICS - 飞行合格技术

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摘要

0.1 um InGaAs/InAlAs/InP HEMT MMIC technology on 3- inch InP substrates has been qualified in the categories of three-temperature lifetest, gamma radiation, RF survivability, electrostatic discharge, via-hole baking, and H{sub}2 poisoning. The three-temperature lifetest (T{sub}1 =215°C, T{sub}2=230°C and T{sub}3=250°C of 0.1 um InGaAs/InAlAs/InP HEMT MMICs in a N{sub}2 ambient demonstrates an activation energy (Ea) as high as 1.9 e V achieving a projected median-time-to-failure (MTF) = 1×10{sup}8 hours at a 125°C junction temperature. Gamma radiation up to 5 mega RAD dose does not induce any degradation of DC/RF characteristics. Electrostatic discharge (ESD) shows destructive voltage up to 100 Volts. Furthermore, 0.1 um InP HEMTs exhibit less sensitivity to H{sub}2 exposure than 0.1 um GaAs pseudomorphic HEMTs. The qualification results demonstrate the readiness of 0.1 um InGaAs/InAlAs/InP MMICs technology for flight applications.
机译：在3英寸InGaAs / Inalas / InP HEMT MMIC技术上3英寸INP基板的特征在于三温寿命，伽马辐射，RF活力，静电放电，通孔烘焙和H {} 2中毒等级。三温寿命（t {sub} 1 = 215°C，t {sub} 2 = 230°C和t {sub} 3 = 250°C为0.1μmIngaAs / Inalas / Inp HEMT MMIC在N {SUB中2环境表现出高达1.9 e V的激活能量（EA），在125°C结温下8小时实现投影的中值 - 失败（MTF）= 1×10 {sup}。伽玛辐射到5兆醛剂量不会诱导DC / RF特性的任何降低。静电放电（ESD）显示出高达100伏的破坏性电压。此外，0.1um InP HEMTS对H {Sub} 2曝光的敏感性小于0.1 UM GaAs Pseudomorphic Hemts 。资格结果证明了0.1米Ingaas / Inalas / Inp MMICS技术的飞行应用。

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