AuSi and AuSn Eutectic Die Attach Case Studies from Small (12 mil) to Large (453 mil) Die

机译：AUSI和AUSN共晶模具的案例研究从小（12密耳）到大（453密耳）模具

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High power transistor, laser, and LED devices require packaging to remove thermal energy from the die. Although some silver filled epoxies provide thermal conductivity approaching 60 W/mK, AuSi and AuSn solder have long proven superior thermal performance. Materials such as Si and GaAs on CuW and GaN on SiC will be discussed in three case studies for die sizes ranging from 12 × 21 ×4 mil thick to 453 × 274 × 12 mil thick, using AuSi or AuSn eutectic die attach processes. The cases provide an overview of material selection and methods for optimized utilization of eutectic solders. Bond quality metrics such as fillet, voiding, and shear will also be covered in this paper.

机译：高功率晶体管，激光器和LED器件需要包装以从模具中去除热能。虽然一些填充的环氧树脂提供热电导，但艾西和AUSN焊料具有长期验证的热性能。 Si和GaAs上的材料和GaN上SiC的材料将在三种情况下讨论用于厚度为12×21×4密耳的模具尺寸为453×274×12密耳，使用Ausi或AUSN共晶模具附着工艺。该案例概述了材料选择和用于优化共晶焊料的方法的方法。本文还将涵盖粘合质量指标，如圆角，空隙和剪切。

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来源
《International Symposium on Microelectronics》|2010年||共8页
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作者
Daniel D. Evans; Zeger Bok;
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中图分类 TN4-53;
关键词
AuSi Eutectic Die Attach; AuSn Eutectic Die Attach; RF Package;

机译：Ausi共晶模具连接;AUSN共晶模具连接;射频包装;

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4. AuSi and AuSn Eutectic Die Attach Case Studies from Small (12 mil) to Large (453 mil) Die [C] . Daniel D. Evans, Zeger Bok International Symposium on Microelectronics . 2010

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AuSi and AuSn Eutectic Die Attach Case Studies from Small (12 mil) to Large (453 mil) Die

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