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首页> 外文会议>Conference on optical microlithography >A 90-nm design-rule patterning application using alt-PSM with KrF lithography for volume manufacturing at k1=0.27
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A 90-nm design-rule patterning application using alt-PSM with KrF lithography for volume manufacturing at k1=0.27

机译：使用KRF光刻的ALT-PSM在K1 = 0.27时使用ALT-PSM的90nm设计规则图案化应用。

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We selected alternating phase shift technology to image 90nm dense lines with a pitch of 200nm for volume production purposes. We simulated which settings of illumination were needed to achieve these pitches taking into account the boundary condition of the exposure tool with the wavelength of 248nm and its maximum NA of 0.68. The simulations showed, that normalized image log slope (NILS) is above 2 for a focus range of at least 600nm, if an alternating phase shift mask is used at the very low a of 0.2 Typical manufacturing conditions with process variations, lens errors and mask deviations were included in the simulations. Based on these results, on the one hand the mask was specified and manufactured; on the other hand the tool was adaptated to the low σ requirement and the specific lens error sensitivities. Shipley's UV212 on BARC AR7 was used at a resist thickness of 250nm. The resist process was optimized by reducing the concentration of the developer. Finally, experimental verification of this entire system with wafer exposures shows that 90nm lines with a pitch of 200nm could be printed with a focus window of more than 600nm.
机译：我们选择了交替相移技术来图像的90nm的密集线条为200nm的用于音量生产目的的节距。我们模拟这是需要的照明设置，以实现这些间距考虑到与248nm的波长和它的最大的0.68 NA的曝光工具的边界条件。仿真结果表明，即标准化图像对数斜率（NILS）在2以上为至少600nm处的聚焦范围，如果交替相移掩模是在与工艺变化，透镜误差和掩模0.2典型制造条件的非常低的用过的偏差被列入模拟。基于这些结果，在一方面掩模被指定和制造;在另一方面该工具adaptated到低σ要求和特定透镜误差的敏感性。使用希普利对BARC AR7 UV212在250nm的抗蚀剂的厚度。抗蚀剂处理通过减少显影剂的浓度最佳化。最后，晶片的曝光示出该整个系统的实验验证，与200nm的的间距的90nm线可以被印有比600nm的更聚焦的窗口。

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