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首页> 外文会议>Annual BACUS Symposium on Photomask Technology >Quartz etch process to improve etch depth linearity and uniformity using Mask Etcher IV
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Quartz etch process to improve etch depth linearity and uniformity using Mask Etcher IV

机译：使用掩模蚀刻器IV来提高蚀刻深度线性和均匀性的石英蚀刻工艺

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Alternating Aperture Phase Shift masks (alt-APSM) are being increasingly used to meet present day lithography requirements by providing increased resolution. The quartz dry etch is a critical step in the manufacture of these photomasks. Etch depth linearity, phase uniformity and minimum etched surface roughness are critical factors. To achieve this, etched quartz structures need to have good selectivity to resist / chrome, vertical sidewalls and good etch depth uniformity over the mask area. Using the Mask Etcher IV at Unaxis USA, a series of experiments were performed to study and identify the trends in quartz etching for photomasks. Etch depth uniformity was measured using an n&k1700RT and etch depth linearity from feature sizes ～0.4 μm to ～1.4 μm was measured using an AFM. Cross sections of the ～0.6 μm structure were obtained using a SEM to check for profile and any evidence of micro trenching. After several set-up experiments, an optimized process to minimize etch depth linearity and improve etch depth uniformity was obtained and is presented here.
机译：交替的孔径相移掩模（Alt-APSM）越来越多地用于通过提供增加的分辨率来满足现在的光刻要求。石英干蚀刻是制造这些光掩模的关键步骤。蚀刻深度线性，相位均匀性和最小蚀刻表面粗糙度是关键因素。为了实现这一点，蚀刻的石英结构需要具有良好的选择性来抵抗/铬，垂直侧壁和掩模区域的良好蚀刻深度均匀性。在UNAXIS USA使用掩模蚀刻器IV，进行了一系列实验，以研究和识别用于光掩模的石英蚀刻中的趋势。使用N＆K1700RT测量蚀刻深度均匀性，使用AFM测量从特征尺寸〜0.4μm至〜1.4μm的蚀刻深度线性。使用SEM获得〜0.6μm结构的横截面检查轮廓和微挖掘的任何证据。在几个设置实验之后，获得了最小化蚀刻深度线性度并提高蚀刻深度均匀性的优化过程，并在此提出。

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