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首页> 外文会议>International Conference on Advanced Ceramics and Composites >INFLUENCE OF Yb_2O_3 AND Er_2O_3 ON BaTiO_3 CERAMICS MICROSTRUCTURE AND CORRESPONDING ELECTRICAL PROPERTIES
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INFLUENCE OF Yb_2O_3 AND Er_2O_3 ON BaTiO_3 CERAMICS MICROSTRUCTURE AND CORRESPONDING ELECTRICAL PROPERTIES

机译：YB_2O_3和ER_2O_3对BATIO_3陶瓷微结构和相应电性能的影响

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摘要

In this article the additives Yb and Er oxides are used as doping materials for BaTiO3-based multilayer devices. The amphoteric behavior of these rare-earth ions leads to the increase of dielectric permittivity and decrease of dielectric losses. BaTiO_3-ceramics doped with 0.01 up to 0.5 wl percent of Yb_2O_3and Er_2O_3 were prepared by conventional solid state procedure and sintered up to 1320 deg C for four hours. In BaTiO_3 doped with a low level of rare-earth ions the grain size ranged from 10-60 mu m. With the higher dopant concentration the abnormal grain growth is inhibited and the grain size ranged from between 2-10 mu m. The measurements of capacitance and dielectric losses as a function of frequency and temperature have been done in order to correlate the microstructure and dielectric properties of doped BaTiO_3-ceramics. The temperature dependence of the dielectric constant as a function of dopanl amount has been investigated.
机译：在本文中，添加剂Yb和ER氧化物用作基于BATIO3的多层器件的掺杂材料。这些稀土离子的两性行为导致介电常数的增加和介电损耗的降低。通过常规固态方法制备掺杂0.01至0.5W1％的YB_2O_3和ER_2O_3的BATIO_3陶瓷，并烧结高达1320℃的4小时。在BATIO_3掺杂有低水平的稀土离子，晶粒尺寸范围为10-60μm。掺杂剂浓度较高，抑制异常晶粒生长，晶粒尺寸范围为2-10μm。已经完成了作为频率和温度函数的电容和介电损耗的测量，以便将掺杂BATIO_3陶瓷的微观结构和介电性能相关。研究了作为二烷量的函数的介电常数的温度依赖性。

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