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首页> 外文会议>Annual Conference on Magnetism and Magnetic Materials >Surface reactions during etching of organic Iow-k films by plasmas of N_2 and H_2
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Surface reactions during etching of organic Iow-k films by plasmas of N_2 and H_2

机译：通过N_2和H_2的蚀刻蚀刻有机IOW-K膜的表面反应

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摘要

Surface reactions during etching of organic low-k film by N_2 and H_2 plasmas were studied through observations of the surface resident species using in situ infrared spectroscopy and in vacuo electron-spin-resonance techniques. We observed surface modifications by the formation of CN and NH bonds after exposure to plasmas generated from N_2 and H_2. The number of carbon dangling bonds were greater in processes where H_2 was present. The passivation of carbon dangling bonds leads to CH_3, NH_3, and CN functionalities, which are the precursors for etching products that are desorbed, which includes volatile forms such as HCN and C_2N_2.
机译：通过使用原位红外光谱和真空电子 - 自旋共振技术来研究通过N_2和H_2等离子体进行蚀刻有机低k膜和H_2等离子体的表面反应。通过在暴露于从N_2和H_2产生的等离子体后形成CN和NH键观察表面修饰。在存在H_2的过程中，碳悬空键的数量更大。碳悬空键的钝化导致CH_3，NH_3和CN官能团，其是用于解吸的蚀刻产物的前体，其包括挥发性形式，例如HCN和C_2N_2。

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