Our previous study revealed that setting the induced intrinsic anisotropy orthogonal to the shape anisotropy to the toggle-MRAM (toggle mode magnetoresistive random access memory) element, thus giving zero total anisotropy, can reduce the operating field substantially with a greater margin. It has been confirmed that further reduction of the operating field is possible by applying a bias field keeping a substantial operating field margin, and that by choosing a proper bias field and the coupling field between the two magnetic layers composing a synthetic antiferromagnet memory element, the "orthogonal anisotropy" toggle-MRAM can be endowed with a greater margin than the conventional Stoner-Wohlfarth-type MRAM for the same strength of operating field, memory life, and half-select disturb robustness.
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