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Effect of potentials and electric charges for copper and indium depositions to the photocurrent responses of CuInS2 thin films fabricated by stack electrodeposition followed by sulfurization

机译：铜和铟沉积潜力和电荷对由叠层电沉积后的Cuins2薄膜的光电响应，然后进行硫化

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Effect of potentials and electriccharges of copperand indium depositions to the photocurrent responses of CuInS2 thin film fabricated by electrodeposition followed by sulfurizationwere investigated. The characterization and elemental compositions of as-deposited Cu/In and CuInS2 thin films used X-RD and EDAX. Photocurrent responses of the obtained CuInS2 thin films were analyzed by linear sweep voltammetry (LSV) in europium solution under chopped irradiation. Photocurrent responses showed that fabricated CuInS2 thin films had p-type photoresponses. Indium deposition on copper was influenced by copper morphology resulted by a certain potential deposition. Increasing potential of indium deposition on copper and electric charge of copper deposition reduced photocurrent for the former but did not change photocurrent of CuInS2 for the latter.

机译：铜铟沉积电位和电荷对电沉积后水沉积后的Cuins2薄膜的光电流反应的影响。沉积Cu / In和Cuins2薄膜的表征和元素组成使用X-Rd和eDax。通过在切碎的照射下通过线性扫描伏安法（LSV）分析所得CuinS2薄膜的光电流反应。光电流反应显示，制造的Cuins2薄膜具有p型光膜。铜上的铟沉积受到铜形态的影响，导致某种电位沉积。铟沉积对铜沉积铜和电荷的潜力降低了前者的光电流，但未改变后者的Cuins2的光电流。

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《Joint Conference on Chemistry》|2018年|541 p.|共7页
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Gunawan; A Haris; H Widiyandari;
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Effect of potentials and electric charges for copper and indium depositions to the photocurrent responses of CuInS2 thin films fabricated by stack electrodeposition followed by sulfurization

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