Impact of Quantum Capacitance on the Characteristics of MoS2 Field Effect Transistor

机译：量子电容对MOS2场效应晶体管特性的影响

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MoS_2 transistors with SiO_2 gate insulators were fabricated from the experiment. The Raman andPhotoluminescence of monolayer MoS_2 and the electrical and photoelectric properties of prepared MoS_2 transistorswere investigated. Notably, the electrical performance model MoS_2 transistor was carried out by considering thequantum effect of capacity building of MoS_2 channel, and comparison analysis according to the result of simulationand experiment results, the model is suitable for the system study of MoS_2 transistor. These results suggest that MoS_2transistors are suitable for nanoelectronics and optoelectronics devices.

机译：使用SiO_2栅极绝缘体的MOS_2晶体管由实验制造。拉曼和单层MOS_2的光致发光和制备MOS_2晶体管的电气和光电性能被调查了。值得注意的是，通过考虑到的电气性能模型MOS_2晶体管进行MOS_2通道容量建设的量子效应，以及根据仿真结果的比较分析实验结果，该模型适用于MOS_2晶体管的系统研究。这些结果表明MOS_2晶体管适用于纳米电子和光电子装置。

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《National Conference on Laser Technology and Optoelectronics》|2019年|1 CD-ROM|共5页
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Q. H. Tan; W. P. Ren; Q. J. Wang; Y. K. Liu;
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Impact of Quantum Capacitance on the Characteristics of MoS2 Field Effect Transistor

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