Nonequilibrium charge carriers recombination diffusion peculiarities and bleaching in InGaAs(P) epitaxial layers

机译：非平衡电荷载体重组扩散特性并在InGaAs（P）外延层中的漂白

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The method of picosecond laser induced grating (LIG) was used for investigation of non-equilibrium charge carriers (NCC) dynamics in the epitaxial layers of InGaAsP and InGaAs. The carriers recombination time $tau$-R$/ and diffusion coefficient D$-a$/ have been determined. The influence of bleaching on the revealed values is discussed.

机译：PICOSECOND激光诱导光栅（LIG）的方法用于INGAASP和INGAAs外延层中的非平衡电荷载体（NCC）动力学的研究。运营商重组时间$ tau $ -r $ /和扩散系数d $ -a $ /已确定。讨论了漂白对揭示值的影响。

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《International symposium on physical concepts and materials for novel optoelectronic device applications》|1993年||共5页
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Mindaugas Petrauskas; Saulius Juodkazis; Magnus Willander; Aziz Quacha;
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中图分类材料和工作物质;
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4. Nonequilibrium charge carriers recombination diffusion peculiarities and bleaching in InGaAs(P) epitaxial layers [C] . Mindaugas Petrauskas, Vilnius Univ., Vilnius, Physical Concepts and Materials for Novel Optoelectronic Device Applications II . 1993

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Nonequilibrium charge carriers recombination diffusion peculiarities and bleaching in InGaAs(P) epitaxial layers

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