Nonequilibrium charge carriers recombination diffusion peculiarities and bleaching in InGaAs(P) epitaxial layers

机译：InGaAs（P）外延层中非平衡电荷载流子的复合扩散特性和漂白

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Abstract: The method of picosecond laser induced grating (LIG) was used for investigation of non-equilibrium charge carriers (NCC) dynamics in the epitaxial layers of InGaAsP and InGaAs. The carriers recombination time $tau$-R$/ and diffusion coefficient D$-a$/ have been determined. The influence of bleaching on the revealed values is discussed. !15

机译：摘要：用皮秒激光诱导光栅（LIG）方法研究了InGaAsP和InGaAs外延层中非平衡电荷载流子（NCC）的动力学。已经确定了载流子复合时间$ tau $ -R $ /和扩散系数D $ -a $ /。讨论了漂白对显示值的影响。！15

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《Physical Concepts and Materials for Novel Optoelectronic Device Applications II》|1993年|p.229-233|共5页
会议地点 Trieste(IT)
作者
Mindaugas Petrauskas; Vilnius Univ.; Vilnius; Lithuania; Saulius Juodkazis; Vilnius Univ.; Vilnius; Lithuania; Magnus Willander; Linkoping Univ.; Linkoping; Sweden; Aziz Quacha; Linkoping Univ.; Linkoping; Sweden.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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4. Nonequilibrium charge carriers recombination diffusion peculiarities and bleaching in InGaAs(P) epitaxial layers [C] . Mindaugas Petrauskas, Saulius Juodkazis, Magnus Willander, International symposium on physical concepts and materials for novel optoelectronic device applications . 1993

机译：非平衡电荷载体重组扩散特性并在InGaAs（P）外延层中的漂白
5. Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers. [D] . Elhami Khorasani, Arash. 2013

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Nonequilibrium charge carriers recombination diffusion peculiarities and bleaching in InGaAs(P) epitaxial layers

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