PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

机译：IngaN / GaN多量子阱中的相分离

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Evidence is presented for phase separation in In_(0.27)Ga_(0.73)N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN. consistent with the formation of an In-poor phase.

机译：在IN_（0.27）GA_（0.73）N / GaN多量子阱（MQW）中，呈现了分相分离的证据。在1100℃的温度下退火4分钟后，将2.95eV的吸收阈值被2.65eV的宽峰取代。该峰值归因于在活性区域中形成富含富含的InGaN阶段。 X射线衍射测量显示衍射峰朝向GaN的偏移。与形成贫阶段的形成一致。

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《Symposium on nitride semiconductors》|1998年||共5页
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PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

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