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THE EFFECT OF HYDROGEN CARRIER GAS ON THE MORPHOLOGICAL EVOLUTION AND MATERIAL PROPERTIES OF GaN ON SAPPHIRE

机译：氢载气对蓝宝石甘甘形态演化和材料特性的影响

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In-situ optical reflectance is used to monitor the morphological evolution of the two-step GaN growth on sapphire. The amount of H_2 carrier gas used in the growth is observed to strongly influence the morphological evolution of the low temperature buffer layer and the subsequent high temperature nucleation behavior, which in turn affects the structural and electrical properties of the GaN epitaxial films. The optical reflectance transients correlate with the sizes and distributions of nuclei as observed by AFM.

机译：原位光学反射率用于监测蓝宝石对两步GaN生长的形态演变。观察到生长中使用的H_2载体的量强烈影响低温缓冲层的形态学化和随后的高温成核行为，这反过来影响GaN外延薄膜的结构和电性能。光学反射率瞬变与由AFM观察到的核的尺寸和分布相关。

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《Symposium on nitride semiconductors》|1998年||共6页
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THE EFFECT OF HYDROGEN CARRIER GAS ON THE MORPHOLOGICAL EVOLUTION AND MATERIAL PROPERTIES OF GaN ON SAPPHIRE

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