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Porosity-induced optical phonon engineering in III-V compounds

机译:III-V化合物的孔隙诱导的光学声子工程

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New possibilities for modifying the phonon spectra of III-V compounds are evidenced by micro-Raman analysis of porous layers prepared by electrochemical anodization of (111)A-oriented n-GaP substrates. In particular, a surface-related vibrational mode along with a porosity-induced decoupling between the longitudinal optical (LO) phonon and plasmon are observed. We prove that filling in the pores with other materials (aniline as a first approach) is a promising tool for controlling the surface phonon frequency.
机译:通过电化学阳极氧化(111)取向的n间隙基材的电化学阳极氧化制备的多孔层的微拉曼分析,可以通过微拉曼分析来证明III-V化合物的新可能性。特别地,观察到表面相关的振动模式以及在纵向光学(LO)声子和等离子体之间的孔隙率引起的去耦。我们证明,用其他材料填充孔(作为第一种方法)是用于控制表面声子频率的有前途的工具。

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